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skb04n60 1 rev. 2.3 oct. 07 fast igbt in npt-technology with soft, fast recovery anti-parallel emcon diode ? 75% lower e off compared to previous generation combined with low conduction losses ? short circuit withstand time ? 10 s ? designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability ? very soft, fast recovery anti-parallel emcon diode ? qualified according to jedec 1 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ) t j marking package skb04n60 600v 4a 2.3v 150 c k04n60 pg-to-263-3-2 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current t c = 25 c t c = 100 c i c 9.4 4.9 pulsed collector current, t p limited by t jmax i cpuls 19 turn off safe operating area v ce 600v, t j 150 c - 19 diode forward current t c = 25 c t c = 100 c i f 10 4 diode pulsed current, t p limited by t jmax i fpuls 19 a gate-emitter voltage v ge 20 v short circuit withstand time 2 v ge = 15v, v cc 600v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 50 w operating junction and storage temperature t j , t stg -55...+150 c soldering temperature (reflow soldering, msl1) t s 245 c 1 j-std-020 and jesd-022 2 allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to-263-3-2
skb04n60 2 rev. 2.3 oct. 07 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 2.5 diode thermal resistance, junction ? case r thjcd 4.5 smd version, device on pcb 1) r thja 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =4a t j =25 c t j =150 c 1.7 - 2.0 2.3 2.4 2.8 diode forward voltage v f v ge =0v, i f =4a t j =25 c t j =150 c 1.2 - 1.4 1.25 1.8 1.65 gate-emitter threshold voltage v ge(th) i c =200 a, v ce = v ge 3 4 5 v zero gate voltage collector current i ces v ce =600v, v ge =0v t j =25 c t j =150 c - - - - 20 500 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =4a 3.1 - s dynamic characteristic input capacitance c iss - 264 317 output capacitance c oss - 29 35 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 17 20 pf gate charge q gate v cc =480v, i c =4a v ge =15v - 24 31 nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7 - nh short circuit collector current 2) i c(sc) v ge =15v, t sc 10 s v cc 600v, t j 150 c - 40 - a 1) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for collector connection. pcb is vertical without blown air. 2) allowed number of short circuits: <1000; time between short circuits: >1s.
skb04n60 3 rev. 2.3 oct. 07 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 22 26 rise time t r - 15 18 turn-off delay time t d(off) - 237 284 fall time t f - 70 84 ns turn-on energy e on - 0.070 0.081 turn-off energy e off - 0.061 0.079 total switching energy e ts t j =25 c, v cc =400v, i c =4a, v ge =0/15v, r g =67 ? , l 1) =180nh, c 1) =180pf energy losses include ?tail? and diode reverse recovery. - 0.131 0.160 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 180 15 165 - - - ns diode reverse recovery charge q rr - 130 - nc diode peak reverse recovery current i rrm - 2.5 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c, v r =200v, i f =4a, di f /dt =200a/ s - 180 - a/ s switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 22 26 rise time t r - 16 19 turn-off delay time t d(off) - 264 317 fall time t f - 104 125 ns turn-on energy e on - 0.115 0.132 turn-off energy e off - 0.111 0.144 total switching energy e ts t j =150 c v cc =400v, i c =4a, v ge =0/15v, r g =67 ? , l 1) =180nh, c 1) =180pf energy losses include ?tail? and diode reverse recovery. - 0.226 0.277 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 230 23 227 - - - ns diode reverse recovery charge q rr - 300 - nc diode peak reverse recovery current i rrm - 4 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =150 c v r =200v, i f =4a, di f /dt =200a/ s - 200 - a/ s 1) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e.
skb04n60 4 rev. 2.3 oct. 07 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 10a 20a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 1a . 1a 1a 0a dc 1ms 200 s 50 s 15 s t p =2 s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 67 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25c 50c 75c 100c 125c 0w 10w 20w 30w 40w 50w 60w i c , collector current 25c 50c 75c 100c 125c 0a 2a 4a 6a 8a 10a 12a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
skb04n60 5 rev. 2.3 oct. 07 i c , collector current 0v 1v 2v 3v 4v 5v 0a 3a 6a 9a 12a 15a 15v 13v 11v 9v 7v 5v v ge =20v i c , collector current 0v 1v 2v 3v 4v 5v 0a 3a 6a 9a 12a 15a 15v 13v 11v 9v 7v 5v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 0v 2v 4v 6v 8v 10v 0a 2a 4a 6a 8a 10a 12a 14a -55c +150c t j =+25c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 1.0v 1.5v 2.0v 2.5v 3.0v 3.5v 4.0v v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v) i c = 4 a i c = 8a
skb04n60 6 rev. 2.3 oct. 07 t , switching times 0a 2a 4a 6a 8a 10a 10ns 100ns t r t d(on) t f t d(off) t , switching times 0 ? 50 ? 100 ? 150 ? 200 ? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 67 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 4a, dynamic test circuit in figure e) t , switching times 0c 50c 100c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v 5.0v 5.5v typ. min. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 4a, r g = 67 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.2ma)
skb04n60 7 rev. 2.3 oct. 07 e , switching energy losses 0a 2a 4a 6a 8a 10a 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj 0.5mj 0.6mj e on * e off e ts * e , switching energy losses 0 ? 50 ? 100 ? 150 ? 200 ? 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 67 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 4a, dynamic test circuit in figure e) e , switching energy losses 0c 50c 100c 150c 0.0mj 0.1mj 0.2mj 0.3mj e ts * e on * e off t j , junction temperature figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 4a, r g = 67 ? , dynamic test circuit in figure e) *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery.
skb04n60 8 rev. 2.3 oct. 07 v ge , gate - emitter voltage 0nc 10nc 20nc 30nc 0v 5v 10v 15v 20v 25v 480v 120v c , capacitance 0v 10v 20v 30v 10pf 100pf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 16. typical gate charge ( i c = 4a) figure 17. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 15v 0 s 5 s 10 s 15 s 20 s 25 i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 20v 0a 10a 20a 30a 40a 50a 60a 70a v ge , gate - emitter voltage v ge , gate - emitter voltage figure 18. short circuit withstand time as a function of gate-emitter voltage ( v ce = 600v, start at t j = 25 c) figure 19. typical short circuit collector current as a function of gate-emitter voltage ( v ce 600v, t j = 150 c)
skb04n60 9 rev. 2.3 oct. 07 t rr , reverse recovery time 40a/ s 120a/ s200a/ s 280a/ s 360a/ s 0ns 100ns 200ns 300ns 400ns 500ns i f = 2a i f = 4a i f = 8a q rr , reverse recovery charge 40a/ s 120a/ s200a/ s 280a/ s 360a/ s 0nc 80nc 160nc 240nc 320nc 400nc 480nc 560nc i f = 8a i f = 4a i f = 2a di f /dt , diode current slope di f /dt , diode current slope figure 20. typical reverse recovery time as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) figure 21. typical reverse recovery charge as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) i rr , reverse recovery current 40a/ s 120a/ s 200a/ s 280a/ s 360a/ s 0a 2a 4a 6a 8a i f = 2a i f = 8a i f = 4a di rr /dt , diode peak rate of fall of reverse recovery current 40a/ s 120a/ s 200a/ s 280a/ s 360a/ s 0a/ s 80a/ s 160a/ s 240a/ s 320a/ s 400a/ s di f /dt , diode current slope di f /dt , diode current slope figure 22. typical reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e) figure 23. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c, dynamic test circuit in figure e)
skb04n60 10 rev. 2.3 oct. 07 i f , forward current 0.0v 0.5v 1.0v 1.5v 2.0v 0a 2a 4a 6a 8a 150c -55c 25c 100c v f , forward voltage -40c 0c 40c 80c 120c 1.0v 1.5v 2.0v v f , forward voltage t j , junction temperature figure 24. typical diode forward current as a function of forward voltage figure 25. typical diode forward voltage as a function of junction temperature z thjcd , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1s 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1 s 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width t p , pulse width figure 26. diode transient thermal impedance as a function of pulse width ( d = t p / t ) figure 28. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) i f = 4a i f = 8 a c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 0.128 0.085 0.387 7.30*10 -3 0.346 4.69*10 -3 1.360 7.34*10 -4 2.280 5.96*10 -5 c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 0.815 0.0407 0.698 5.24*10 -3 0.941 4.97*10 -4 0.046 4.31*10 -5
skb04n60 11 rev. 2.3 oct. 07 pg-to263-3-2
skb04n60 12 rev. 2.3 oct. 07 figure a. definition of switching times figure b. definition of switching losses i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =180nh a n d stray capacity c =180pf.
skb04n60 13 rev. 2.3 oct. 07 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 11/5/07. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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